On Semi公司的NCV51705/D是单路6A高速低边SiC MOSFET驱动器,为了获得最低可能导通损耗,驱动器能向SiC MOSFET器件提供最大可用栅极电压.通过在开通和关断时提供高峰值电流,开关损耗也是最小化.为了提高可靠性, dV/dt免疫性和甚至更快地关断, NCP51705能利用车载充电泵来产生用户可选择的负电源轨.为了完全的兼容性和最小化复杂性,器件还提供外接5V轨,给数字或高速光隔离体的次级边供电. NCP51705还提供重要保护功能如偏压电源的欠压锁住监测和基于驱动电路结温的热关断.器件源电流6A,沉电流能力6A,满足汽车规范AEC−Q100 with Grade 1温度范围.器件内置负电荷泵,可调欠压锁住和去饱和功能. 器件主要用在驱动SiC MOSFET,工业逆变器,马达驱动以及PFC,AC/DC转换器和DC/DC转换器.本文介绍了NCV51705/D主要特性,功能框图,应用电路图以及评估板SEC-3PH-11-OBC-EVB主要特性,车载充电系统的PFC和LLC板建立图,电路图,材料清单.
The NCV51705 driver is designed to primarily drive SiC MOSFETtransistors. To achieve the lowest possible conduction losses, thedriver is capable to deliver the maximum allowable gate voltage to theSiC MOSFET device. By providing high peak current during turn−onand turn−off, switching losses are also minimized. For improvedreliability, dV/dt immunity and even faster turn−off, the NCV51705can utilize its on−board charge pump to generate a user selectablenegative voltage rail.
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