Infineon IMBF170R1K0M1 1700V SiC MOSFET三相功率转换器解决方案
Infineon公司的IMBF170R1K0M1是CoolSiC™ 1700V SiC Trench MOSFET,采用TO-263 7L表面安装器件(SMD)封装,漏极和源极的爬电距离大约为7mm,这样安全标准很容易满足.单独驱动器的源引脚有助于降低栅极回路寄生电感,以避免栅极激振效应.器件最适合用在反激拓扑,12V/0V栅源极电压和大多数的反激控制器兼容,具有非常低的开关损耗,完全可控制dV/dt以适宜EMI优化. SiC MOSFET降低了系统的复杂性,可直接从反激控制器直接驱动,有效提高了效率和降低冷却成本,具有更高的工作频率.主要用在能量产生如太阳能逆变器,工业电源如工业UPS和工业开关电源(SMPS)以及充电器等.本文介绍了IMBF170R1K0M1主要特性和优势, 最大额定值, 静态特性和动态特性,开关特性,以及采用1700 V CoolSiC™ MOSFET 的62.5W三相功率转换器辅助电源参考板主要特性和技术指标,电路图,材料清单和PCB设计图与变压器电路图.
The 1700 V CoolSiC™ MOSFET from Infineon is an excellent choice for high input voltage DC link systems like those found in auxiliary power supplies for three-phase converters. The TO-263 7L surface-mounted device (SMD) package is an optimized package for up to 1700 V high voltage power device. There is a creepage distance of about 7mm wide between drain and source, so safety standards are easily met. The separate driver source pin is helpful in reducing parasitic inductance of the gate loop to avoid gate ringing effect.
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