On Semi公司的NVHL160N120SC1是N沟 SiC MOSFET,耐压1200V,导通电阻160 m SHAPE * MERGEFORMAT ,电流17A.器件具有超低栅极电荷(QG(tot) = 34 nC),低效率输出电容(Coss = 50 pF),器件取得AEC−Q101资格证书,和RoHS兼容.评估板SECO-HVDCDC1362-15W-GEVB采用NCV1362准谐振峰值电流初级边调整(PSR)反激控制器,3引脚成本最优NVHL160N120SC1 160m SHAPE * MERGEFORMAT 1200V碳化硅(SiC) MOSFET和FFSD0665B-F085 SiC二极管.评估板输入DC电压从250V到900V,提供15V输出电压和15W功率,适合于400V和800V电池系统.效率高达86%.主要用在HEV和EV汽车辅助电源,汽车动力总成系统,EV充电和DC/DC转换器以及工业DC/DC转换,太阳能逆变器(工业级).本文介绍了NVHL160N120SC1主要特性,电特性和最大额定指标,以及评估板SECO−HVDCDC1362−15W−GEVB主要特性,框图,电路图,材料清单和PCB设计图.
15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications Evaluation Board
NVHL160N120SC1
N-Channel
1200 V, 160 m SHAPE * MERGEFORMAT , 17 A
NVHL160N120SC1主要特性:
• Typ. RDS(on) = 160 m SHAPE * MERGEFORMAT
• Ultra Low Gate Charge (typ. QG(tot) = 34 nC)
• Low Effective Output Capacitance (typ. Coss = 50 pF)
• 100% UIL Tested
• Qualified According to AEC−Q101
• These Devices are RoHS Compliant
NVHL160N120SC1典型应用:
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