On Semi NVHL060N090SC1900V 6．6 kW车载充电器解决方案
On Semi公司的NVHL060N090SC1是900V 46A碳化硅(SiC)功率MOSFET.和硅器件相比,SiC MOSFET具有优越的开关性能和更高的可靠性.更低的开态(ON)电阻和紧凑的芯片尺寸,保证有更低的电容和栅极电容.因此,SiC MOSFET系统具有最高的效率,更快的工作频率,较高的功率密度,从而降低了EMI和系统尺寸.On Semi公司的6.6 kW车载充电器(OBC)SEC-6D6KW-OBC-TTP-GEVB参考设计采用NVHL060N090SC1器件,单片高边和低边栅极驱动器FAN7191 F085,650V N沟功率MOSFET SUPERFET® III NVHL025N65S3,隔离大电流和高效率IGBT驱动器NCV57000DWR2G和图腾柱拓扑,系统效率高达97%,以及提供硬件OCP和OVP.其板上辅助电源系统提供了板上所需的所有电源,从而不需要板外DC电源.同时还提供灵活的控制接口,以适应不同的控制器板.主要用在汽车车载充电器和EV/HEV汽车DC/DC转换器.本文介绍了NVHL060N090SC1主要特性和最大指标(TJ = 25C),以及参考设计SEC-6D6KW-OBC-TTP-GEVB主要特性,输入电压90~260Vac,输出电压1.414xVin+10V – 405Vdc,硬件框图,电路图,材料清单和变器电路图,以及PCB设计图.
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVHL060N090SC1主要特性:
• Typ. RDS(on) = 60 mohm
• Ultra Low Gate Charge (typ. QG(tot) = 87 nC)
..
