Infineon 1ED332xMC12N单路5.7 kV (rms)隔离栅极驱动器解决方案
Infineon公司的1ED332xMC12N(1ED-F3)是EiceDRIVER™增强单路电流隔离栅极驱动器. 采用DSO-16宽体封装具有集成保护特性如短路保护,有源米勒箝位和有源关断,用于IGBT, MOSFET和 SiC MOSFET.所有逻辑引脚是3.3V和5V CMOS兼容,能直接连接到微控制器.电流隔离层的数据传输由集成的芯变压器(CT)技术来实现.器件可用于600 V/650 V/1200 V/1700 V/2300 V IGBT, Si 和SiC MOSFET,高达+6 A / -8.5 A典型峰值输出电流,绝对最大输出电源电压VCC2为40V,高共模瞬变免疫(CMTI)大于300 kV/μs,传输时延典型值为85ns.安全认证包括UL 1577(VISO, 测试= 6840 V (rms) 1秒, VISO = 5700 V (rms)测试为60秒).主要用在工业马达驱动,太阳能逆变器,UPS系统,高压DC/DC转换器和DC/AC逆变器,商用和农用汽车(CAV),商用空调器(CAC),高压隔离DC/DC转换器以及隔离开关电源(SMPS).本文介绍了1ED332xMC12N主要特性和1ED3320MC12N, 1ED3321MC12N 和1ED3322MC12N框图, 典型应用电路图以及单极与双极电源应用案例, 栅极驱动器主要指标. 评估板Eval-1ED3321MC12N主要特性和框图,电路图,材料清单和PCB设计图.
Single-channel 5.7 kV (rms) isolated gate driver IC with DESAT and soft-off
The 1ED332xMC12N (1ED-F3) is a EiceDRIVER™ Enhanced single channel galvanically isolated gate driver family with integrated protection features such as short circuit protection, active Miller Clamp and active shutdown for IGBT, MOSFET and SiC MOSFET in a DSO-16 wide body package. The products provide a typical output current up to +6 A / -8.5 A.
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