Infineon 1EDI20I12AH 1200V单路IGBT栅极驱动方案
Infineon公司的1EDI20I12AH(1EDIxxI12AH和1EDIxxH12AH)是通用IGBT栅极驱动器,基本控制和保护特性支持高度可靠系统的快速和容易设计.控制输入逻辑和驱动输出级间集成电流隔离大大增强了安全性.宽输入电压源支持各种信号源如DSP和MCU支持连接.分离的轨到轨驱动器输出简化栅极电阻选择,节省一个外接大电流旁路二极管和增强dV/dt控制.器件适用于600 V/650 V/1200 V IGBT和MOSFET,轨到轨输出时高达10A峰值电流,可分离的源和沉输出,无铁芯变压器驱动器电流隔离,宽输入电压工作范围,适合于工作在高环境温度.主要用在AC和无刷DC马达驱动,高压DC/DC转换器和DC/AC逆变器,电感加热谐振应用,UPS系统,焊接和太阳能.本文介绍了1EDI20I12AH主要特性,框图和应用电路,评估板EVAL-FFXMR12KM1DR主要特性,框图,电路图和主要元件清单和PCB设计图.
Evaluation board for 1200 V CoolSIC™ MOSFET 62mm half-bridge modules (FF2MR12KM1) in interaction with 1200 V EiceDRIVER™ (1EDI20I12AH)
The 1EDIxxI12AH and 1EDIxxH12AH are general purpose IGBT gate drivers. Basic control and protection featuressupport fast and easy design of highly reliable systems.
The integrated galvanic isolation between control input logic and driving output stage grants additional safety.
Its wide input voltage supply range supports the direct connection of various signal sources like DSPs andmicrocontrollers.
The separated rail-to-rail driver outputs simplify gate resistor selection, save an external high current bypassdiode and enhance dV/dt control.
1EDI20I12AH主要特性:
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