Infineon IGOT60R070D1 600 V增强GaN功率晶体管应用方案
Infineon公司的IGOT60R070D1是CoolGaN™ 600 V增强氮化镓(GaN) 高电子迁移率晶体管(HEMT),具有最高质量的最高的效率和功率密度.增强模式晶体管通常处于开关态(OFF),具有超快开关速度,没有反向恢复的电荷,并能反向导通.器件具有低栅极电荷,低输出电荷,以及优越的换向坚固性,工业应用具有JEDEC标准资质(JESD47 和JESD22).IGOT60R070D1能改善系统效率,提高功率密度,赋能更高的工作频率,降低系统成本和系统EMI.主要用在基于半桥拓扑的工业,通信和数据中心开关电源.本文介绍了IGOT60R070D1主要特性和优势, 性能参数,以及IGOT60R070D1半桥评估板主要指标,应用电路,测试电路和并联CoolGAN™电路图以及评估板材料清单和评估板PB设计图.
The IGOT60R070D1 CoolGaN™ 600V enhancement mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency.
The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. It addresses datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.
IGOT60R070D1主要特性:
· Enhancement mode transistor – Normally OFF switch
· Ultra fast switching
· No reverse-recovery charge
· Capable of reverse conduction
..
