NXP GD3100汽车电子IGBT单路栅极驱动解决方案
摘要: NXP公司的GD3100是绝缘栅双极晶体管(IGBT)单路栅极驱动器,集成的电流绝缘和低开态驱动晶体管提供大的充电和放电电流,低动态饱和电压和轨到轨栅极电压控制.电流和温度检测最小化IGBT故障时的应力,精确和可配置欠压锁住(UVLO)提供了保护而同时保证有足够栅极驱动电压净空高度. MC33GD3100通过INTB引脚和SPI接口独立自主地管理严重的故障,报告故障和状态.它能直接驱动大多数IGBT和SiC MOSFET的栅极.它的自测,控制和保护功能是设计高可靠系统(ASIL C/D)所必需的,满足汽车应用的最严格要求,完全满足AEC-Q100 grade 1规范.SPI接口可用于安全检测,编程和灵活性.器件的电流信号绝缘高达8kV ,集成的栅极驱动功率级具有15A的源和沉电流.器件具有低传输延迟和最小化PWM失真, CMTI > 100 V/ns,和200 V到1700 V IGBT/SiC兼容,功率级大于己于125kW,可用于5.0V和3.3V MCU接口,工作频率大于40kHz,工作温度−40 °C 到 125 °C,主要用在汽车.本文介绍了GD3100主要特性,安全特性和安全和认证证书,框图,简化应用框图,以及评估板FRDM-GD3100EVM 主要特性,电路图和材料清单.
Advanced single-channel gate driver for Insulated Gate Bipolar Transistors (IGBTs)
The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power
devices. Integrated Galvanic isolation and low on-resistance drive transistors provide
high charging and discharging current, low dynamic saturation voltage and rail-to-rail
gate voltage control.
Current and temperature sense minimizes IGBT stress during faults. Accurate and
configurable under voltage lockout (UVLO) provides protection while ensuring sufficient
gate drive voltage headroom...
