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STM32芯片超低功耗设计思路

对于给定的制造工艺和晶片区域,微控制器的功耗主要取决于两个因素(动态可控):电压和频率。ST公司L系列超低功耗芯片为130nm超低泄漏工艺,在超低功耗所做的设计思路如下:
 
1. 围绕Cortex-M3内核构建,具有领先的处理性能和代码密度,其处理性能使得运行模式时间更少,因此可以使深度睡眠模式的时间更长;
 
2. 提供3个动态可选电压范围,从1.8V到1.2V,可在能耗上提供超过25%的增益;

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3. 提供7种低功耗模式,逐步禁用与频率无关的电流源(时钟源、非易失性存储器、调压器),直至大部分外设掉电;

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4. 灵活的门控技术,超低功耗模式下只激活必要的逻辑门;
a. 闲置的引脚配置为模拟输入;
b. 连接外围电路的引脚,提供有效的Pull Up或Pull Down电平输入,避免电位差引起泄露电流。

https://upload.semidata.info/new.eefocus.com/article/image/2021/04/20/607eb2ec95a34-thumb.png

附:SMT32 GPIO八种工作方式内部框图
 
GPIO输入:

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https://upload.semidata.info/new.eefocus.com/article/image/2021/04/20/607eb2ece8b6f-thumb.png

GPIO输出:

https://upload.semidata.info/new.eefocus.com/article/image/2021/04/20/607eb2ed07aa0-thumb.png

https://upload.semidata.info/new.eefocus.com/article/image/2021/04/20/607eb2ed04cf6-thumb.png

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https://upload.semidata.info/new.eefocus.com/article/image/2021/04/20/607eb2ecbf453-thumb.png

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