ST MASTERGAN4系统级封装(SiP) 650V GaN驱动方案
ST公司的MASTERGAN4是先进功率系统级封装(SiP),集成了栅极驱动器和两个半桥配置的增强模式GaN功率晶体管.集成的功率GaN有650V漏极-源极阻断电压,RDS(ON) 为225 mΩ.而高边嵌入栅极驱动器能很容易由集成的阴极负载二极管供电.MASTERGAN4在低和高边驱动部分具有UVLO保护,从而防止功率开关工作在低效率或危险条件,其互锁功能避免了交叉导通出现.输入引脚的扩展范围允许容易和MCU,DSP单元和霍尔效应传感器接口.MASTERGAN4的工作温度为-40C 到125C,采用紧凑的9x9 mm QFN封装.主要用在开关电源,充电器和适配器以及高压PFC,DC/DC和DC/AC转换器.本文介绍了MASTERGAN4主要特性,框图,驱动器电特性和应用电路,以及演示板EVALMASTERGAN4主要特性,电路图,材料清单和PCB元件布局图.
The MASTERGAN4 is an advanced power system-in-package integrating agate driver and two enhancement mode GaN power transistors in half bridgeconfiguration. The integrated power GaNs have 650 V drain-source blocking voltageand RDS(ON) of 225 mΩ, while the high side of the embedded gate driver can beeasily supplied by the integrated bootstrap diode.
The MASTERGAN4 features UVLO protection on both the lower and upperdriving sections, preventing the power switches from operating in low efficiencyor dangerous conditions, and the interlocking function avoids cross-conductionconditions.
The extended range of the input pins allows easy interfacing with microcontrollers,DSP units or Hall effect sensors.
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