ST MASTERGAN1 650V氮化镓(GaN)晶体管半桥驱动方案
ST公司的MASTERGAN1是650V增强模式氮化镓(GaN)高迁移率晶体管,先进的功率系统级封装,集成了栅极驱动器和两个半桥配置的增强模式氮化镓(GaN)高迁移率晶体管,具有150 mΩRDS(ON)和650V漏源极击穿电压,而嵌入高边栅极驱动很容易由集成的自举二极管供电. MASTERGAN1对低和高驱动部分具有UVLO保护,以防止功率开关在低效率或危险条件下工作,而交错时钟功能避免了交叉导通的出现.漏极电流(IDS(MAX))为10 A,3.3V到15V兼容输入,具有超温保护.主要用在开关电源,充电器和适配器,高压PFC,DC/DC和DC/AC转换器,UPS系统和太阳能电源.本文介绍了MASTERGAN1主要特性,框图和应用框图,以及评估板EVALMASTERGAN1主要特性,电路图,材料清单和PCB设计图.
High power density half-bridge high voltage driver with two 650V enhancement mode GaN HEMT
The MASTERGAN1 is an advanced power system-in-package integrating a gatedriver and two enhancement mode GaN transistors in half‑bridge configuration.
The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑sourcebreakdown voltage, while the high side of the embedded gate driver can be easilysupplied by the integrated bootstrap diode.
The MASTERGAN1 features UVLO protection on both the lower and upper drivingsections, preventing the power switches from operating in low efficiency ordangerous conditions, and the interlocking function avoids cross-conductionconditions.
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