ST PWD13F60高密度600V功率驱动器解决方案
ST公司的PWD13F60是集成了栅极驱动器和四个N沟功率MOSFET(双半桥配置)高密度功率驱动器.功率MOSFET有320 mΩ的RDS(on)和600V漏-源击穿电压,主要用在工业和家用电器的马达驱动器,工厂自动化,HID镇流器,电源单元和DC/DC与DC/AC转换器.本文介绍了PWD13F60主要特性,框图,典型应用电路图,以及评估板EVALPWD13F60主要特性,电路图,材料清单和PCB设计图.
The PWD13F60 is a high-density power driverintegrating gate drivers and four N-channel powerMOSFETs in dual half bridge configuration.
The integrated power MOSFETs have low RDS(on)of 320 mΩ and 600 V drain-source breakdownvoltage, while the embedded gate drivers highside can be easily supplied by the integratedbootstrap diode. The high integration of thedevice allows to efficiently drive loads in a tinyspace.
The PWD13F60 device accepts a supply voltage(VCC) extending over a wide range and isprotected by means of low-voltage UVLOdetection on the supply voltage.
The input pins extended range allows an easyinterfacing with microcontrollers, DSP units orHall effect sensors.The device is available in a compact VFQFPNpackage.
PWD13F60主要特性:
Power system-in-package integrating gatedrivers and high-voltage power MOSFETs
– Low RDS(on) = 320 mΩ
– BVDSS = 600 V
Suitable for operating as..
