TI LMG5200三相GaN逆变器参考设计TIDA－00909
TI公司的LMG5200是80V GaN半桥功率级,包括两个80V18-mΩGaN FET,输入电压高达80VDC,单独的高边和低边TTL输入,TTL逻辑输入能耐电压高达14V,时延典型为29.5ns,传输时延匹配2ns,主要用在CNC驱动,非军用无人机,电源转换,伺服驱动和马达控制.本文介绍了LMG5200主要特性,功能框图,48V/10A高频PWM三相GaN逆变器参考设计TIDA-00909主要特性,框图,电路图,材料清单和PCB完整设计图.
The LMG5200 device, a 80-V driver, GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two, 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
The TTL logic compatible inputs can withstand input voltages up to 14 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire-free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead free package and can be easily mounted on PCBs.
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