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NXP MC33GD3100单路SiC和IGBT功率驱动方案

NXP公司的MC33GD3100是SiC和IGBT功率器件单路栅极驱动器.其集成的电流隔离和低开态电阻提供了高的充电和放电电流,低动态饱和电压和轨到轨栅极电压控制.电流和温度检测最大限度降低IGBT故障时的应力,精确和可配置的欠压锁住(UVLO)提供了保护,从而保证了栅极驱动电压的富裕度. MC33GD3100通过INTB引脚和SPI接口自主管理故障和报告故障与状态.器件能直接驱动大多数的IGBT和SiC MOSFET.器件还提供自测,控制和保护功能以用于高可靠性系统(ASIL C/D)的设计. MC33GD3100满足汽车应用的确最严格要求,完全具有AEC-Q100 grade 1资质. MC33GD3100具有低传输延迟和最小的PWM失真,集成的电流信号隔离高达8kV,集成的栅极驱动功率级有15A峰值源和沉,全可编有源米勒箝位,和负栅极电源兼容,和电流检测和温度检测IGBT兼容,并集成了软关断,两级关断,有源箝位,用于波形整形的分段驱动.主要用在汽车电池管理系统,混合动力汽车和工业马达驱动.本文介绍了MC33GD3100主要特性,安全特性和框图,简化应用框图和评估板FRDMGD31RPEVM主要特性,电路图和材料清单.

 

The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power

devices. Integrated Galvanic isolation and low on-resistance drive transistors provide

high charging and discharging current, low dynamic saturation voltage and rail-to-rail

gate voltage control.

Current and temperature sense minimizes IGBT stress during faults. Accurate and

configurable under voltage lockout (UVLO) provides protection while ensuring sufficient

gate drive voltage headroom.

The MC33GD3100 autonomously manages severe faults and reports faults and status

via INTB pin and an SPI interface.

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