Infineon 2EDN7(8)52x系列2500W图腾柱全桥PFC解决方案
Infineon公司的2EDN752x/2EDN852x系列产品是先进的双路氮化镓驱动器,具有比硅器件有明显的优越性,特别是它的更高的临界电场是使得氮化镓对功率半导体器件具有非常大的吸引力.和Si MOSFET相比,它的动态开态电阻和更小的电容值.因此,GaN HEMT晶体管具有更高的开关速度,更高的工作频率,提高了功率密度和整个系统的效率.2EDN752x/2EDN852x系列适合于驱动逻辑和正常电平MOSFET,支持OptiMOSTM, CoolMOSTM,标准电平MOSFET,超级结MOSFET以及IGBT和GaN功率器件.控制和使能输入是LV-TTL兼容(CMOS 3.3V),输入电压从-5V到+20V.真正轨到轨级,两个输出的每一输出的沉和源电流是5A.通路到通路间传输时延为1ns,非常适合两路并联使用.主要用在服务器开关电源,通信开关电源,DC/DC转换器,砖形电源,电动工具,工业开关电源,马达控制和太阳能开关电源.本文介绍了2EDN752x / 2EDN852x主要特性,几种配置电路以及2500W图腾柱全桥PFC演示板主要特性,主板,子板和控制板电路和材料清单.
Gallium nitride (GaN) offers fundamental advantages over silicon. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching. Not only because of the resulting power savings and total system cost reduction, it also allows a higher operating frequency, improves the power density as well as the overall system efficiency...
