Infineon 600 V CoolGaN高压GaN开关绝缘栅驱动方案
Infineon公司的600 V CoolGaN高压GaN开关是单路绝缘栅驱动器,是GaN EiceDRIVER™系列产品. CoolGaN™增强模式HEMT是Infineon公司的EiceDRIVER™ IC中1EDF5673K, 1EDF5673F 和1EDS5663H最好驱动器.单路电流绝缘VIO=1500VDC,输出脉冲宽度大于18ns,传输时延精度13ns,降低死区损坏多达50%,可配置和恒定GaN开关转换速率,强健和节能的开关电源(SMPS)设计,缩短产品上市时间,集成的电流绝缘可工作在苛刻的开关应用,可用在需要安全绝缘的地方.本文介绍了CoolGaN HEMT主要特性, 600V CoolGaN大功率SMPS应用案例以及600 V CoolGaN™半桥评估板指标和极限值,应用电路和评估板电路图,材料清单和PCB设计图.
CoolGaN™ e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H. They ensure robust and highly e_ icient high voltage GaN switch operation whilst concurrently minimizing R&D e_ orts and shortening time-to-market.
CoolGaN HEMT主要特性:
› Low ohmic outputs:
Source: 0.85 _
Sink: 0.35 _
› Single-channel galvanic isolation:
Functional: VIO= 1500 VDC
VIOWM = 510 Vrms (16-pin DSO)
VIOWM = 460 Vrms (LGA 5x5)
Reinforced: VIOTM = 8000 Vpk
(VDE 0884-10 pending)
VIOWM = 1420 VDC
CMTI min: 200 V/ns
› Timing:
Minimum output pulse width: 18 ns
Propagation delay accuracy: 13 ns
Key advantages of designing with the GaN EiceDRIVER™ family..
