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ST STDRIVE601三相半桥高压栅极驱动器解决方案

ST公司的STDRIVE601是单片三相半桥高压栅极驱动器,采用BCD6s离线技术制造,用于N沟功率MOSFET或IGBT,适用于三相应用.所有器件的源电流和沉电流分别是350mA和200mA.采用互锁和死区功能可防止交叉导通.器件的高压可高达600V,dV/dt瞬态度端正免疫度为±50 V/ns,栅极驱动电压范围从9V到20V,整个输入-输出传输时延为85ns,所有通路匹配传输入时延,带滞后的3.3V,5V TTL/CMOS输入,集成了阴极负载二极管(自举二极管),主要用在三相马达驱动和逆变器.本文介绍了STDRIVE601主要特性,框图,典型应用框图以及三相栅极驱动器演示板EVALSTDRIVE601主要特性,电路图,材料清单和PCB设计图.

The STDRIVE601 is a high voltage devicemanufactured with BCD6s offline technology. It isa single-chip with three half-bridge gate drivers forN-channel power MOSFETs or IGBTs suitable for3-phase applications.

All device outputs can sink and source 350 mAand 200 mA respectively. Prevention from crossconduction is ensured by interlocking anddeadtime function.

The device has dedicated input pins for eachoutput and a shutdown pin. The logic inputs areCMOS/TTL compatible down to 3.3 V for easyinterfacing with control devices. Matched delaysbetween low-side and high-side sectionsguarantee no cycle distortion and allow highfrequency operation.

The STDRIVE601 embeds a comparatorfeaturing advanced SmartSD function also integrated in the device, ensuring fast andeffective protection against fault events like overcurrent, overtemperature, etc.

Dedicated UVLO protection on the low-sides andeach of the high-side driving sections allow toprevent the power switches from operating in lowefficiency or dangerous conditions.

The integrated bootstrap diodes as well as all ofthe integrated features of this IC make theapplication PCB design easier, more compact andsimple thus reducing the overall bill of material.

The device is available in SO-28 package.

STDRIVE601主要特性:

 High voltage rail up to 600 V
 Driver current capability:
– STDRIVE601:
– 200 mA source current @ 25℃
– 350 mA sink current @ 25℃
 dV/dt transient immunity ±50 V/ns
 Gate driving voltage range from 9 V to 20 V
 Overall input-output propagation delay: 85 ns
 Matched propagation delay for all channels
 3.3 V, 5 V TTL/CMOS inputs with hysteresis
 Integrated bootstrap diodes
 Comparator for fast overcurrent protection
 Smart shutdown function
 Interlocking and deadtime function
 Dedicated Enable pin
 UVLO function on low-side and high-sides

STDRIVE601应用:

 3-phase motor drives
 Inverters

图1.STDRIVE601框图

图2. STDRIVE601典型应用框图

三相栅极驱动器演示板EVALSTDRIVE601

Demonstration board for STDRIVE601 triple gate driver
The EVALSTDRIVE601 demonstration board is a complete 3-phase inverter which allows evaluating all of the STDRIVE601 features. The power stage features STGD6M65DF2 IGBTs, but can be populated with any IGBT or power MOSFET in DPAK or powerFLAT 8x8 HV package. The board is designed to support a three shunt or a single shunt current sensing topology.

A strip connector allows an easy interfacing with MCU control.
The STDRIVE601 is a 600V gate driver device manufactured with BCD6s offline technology. It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs or IGBTs suitable for 3-phase applications.The device integrates three bootstrap diodes and a smart shutdown feature able to detect very fast overcurrent condition, minimizing the propagation delay between the overcurrent event and the output switch-off.

图3.演示板EVALSTDRIVE601外形图

演示板EVALSTDRIVE601主要特性:

• High voltage rail up to 600V
• Driver supply input voltage range 9V-20V
• STGD6M65DF2 IGBTs power stage featuring:
– V(BR)CES = 650 V
– VCE(sat) = 1.55 V @ IC = 6 A
• Dual footprint for IGBT/MOSFET package:
– DPAK
– PowerFlat 8x8
• Selectable single or 3-shunt current sensing topology:
– Sensored or sensorless BEMF detection
– FOC or 6-Step algorithm
• SmartShutdown overcurrent protection
• Hall effect sensors connector
• Bus voltage sensing
• 450V bulk capacitor
• Connector for interfacing with MCU
• RoHS compliant

演示板EVALSTDRIVE601应用:

• Three-phase motor drives
• Fans
• Pumps
• Refrigerator compressors
• Industrial inverters
• Appliances

图4.演示板EVALSTDRIVE601电路图(1):驱动器输出级

图5.演示板EVALSTDRIVE601电路图(2):反馈网络
演示板EVALSTDRIVE601材料清单:



图6.演示板EVALSTDRIVE601 PCB布局图(1):顶层元件布放

图7.演示板EVALSTDRIVE601 PCB布局图(2):顶层

图8.演示板EVALSTDRIVE601 PCB布局图(3):底层
详情请见:
https://www.st.com/content/ccc/resource/technical/document/datasheet/group3/9c/26/55/d5/fc/e0/43/cc
/DM00604820/files/DM00604820.pdf/jcr:content/translations/en.DM00604820.pdf

https://www.st.com/content/ccc/resource/technical/document/data_brief/group2/9c/72/e9/39/4c/92
/45/1a/DM00612114/files/DM00612114.pdf/jcr:content/translations/en.DM00612114.pdf

en.DM00604820.pdf
en.DM00612114.pdf

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